SIZ340ADT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.05 EUR |
| 6000+ | 1 EUR |
| 9000+ | 0.95 EUR |
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Technische Details SIZ340ADT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 69.7A, Dauer-Drainstrom Id, p-Kanal: 69.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 69.7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm, Verlustleistung, p-Kanal: 31W, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 31W, Betriebstemperatur, max.: 150°C, SVHC: Lead (19-Jan-2021).
Weitere Produktangebote SIZ340ADT-T1-GE3 nach Preis ab 1 EUR bis 2.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIZ340ADT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET DUAL N-CHANNEL 30-V |
auf Bestellung 12300 Stücke: Lieferzeit 14-28 Tag (e) |
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SIZ340ADT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 16485 Stücke: Lieferzeit 21-28 Tag (e) |
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SIZ340ADT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 69.7A Dauer-Drainstrom Id, p-Kanal: 69.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm Verlustleistung, p-Kanal: 31W euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) |
auf Bestellung 11672 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ340ADT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ340ADT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm Verlustleistung, p-Kanal: 31W euEccn: NLR Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W SVHC: Lead (19-Jan-2021) |
auf Bestellung 11672 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ340ADT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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SIZ340ADT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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| SIZ340ADT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIZ340ADT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |