SIZ340ADT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
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Technische Details SIZ340ADT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 69.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 69.7A, Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm, Verlustleistung, p-Kanal: 31W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 31W, Betriebstemperatur, max.: 150°C, SVHC: To Be Advised.
Weitere Produktangebote SIZ340ADT-T1-GE3 nach Preis ab 0.68 EUR bis 1.74 EUR
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SIZ340ADT-T1-GE3 | Vishay Semiconductors |
MOSFETs DUAL N-CHANNEL 30-V |
auf Bestellung 10323 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340ADT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 16381 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340ADT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.7A Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 6732 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIZ340ADT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.7A Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 6732 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIZ340ADT-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs DUAL N-CHANNEL 30-V
MOSFETs DUAL N-CHANNEL 30-V
auf Bestellung 10323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.72 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.76 EUR |
| 3000+ | 0.72 EUR |
| 6000+ | 0.68 EUR |
| SIZ340ADT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 16381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 13+ | 1.43 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.77 EUR |
| SIZ340ADT-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 6732 Stücke:
Lieferzeit 14-21 Tag (e)
| SIZ340ADT-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 3570µohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3570µohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 6732 Stücke:
Lieferzeit 14-21 Tag (e)