SIZ340BDT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ340BDT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 69.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 69.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm, Verlustleistung, p-Kanal: 31W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pins, Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 31W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SIZ340BDT-T1-GE3 nach Preis ab 0.64 EUR bis 1.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIZ340BDT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16.9A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 6089 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SIZ340BDT-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 30V N-CHANNEL DUAL |
auf Bestellung 22333 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
SIZ340BDT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C |
auf Bestellung 10923 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SIZ340BDT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C |
auf Bestellung 10923 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SIZ340BDT-T1-GE3 | Hersteller : VISHAY | SIZ340BDT-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |