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SIZ346DT-T1-GE3

SIZ346DT-T1-GE3 Vishay / Siliconix

siz346dt.pdf Hersteller: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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2+1.42 EUR
10+1.03 EUR
100+0.70 EUR
500+0.59 EUR
1000+0.50 EUR
3000+0.45 EUR
6000+0.43 EUR
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Technische Details SIZ346DT-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 17A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16W, 16.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V, Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).

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SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 Hersteller : Vishay Siliconix siz346dt.pdf Description: MOSFET 2N-CH 30V 17A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 2755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 Hersteller : Vishay siz346dt.pdf Dual N-Channel 30 V (D-S) MOSFETs
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SIZ346DT-T1-GE3 Hersteller : VISHAY siz346dt.pdf SIZ346DT-T1-GE3 Multi channel transistors
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SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 Hersteller : Vishay Siliconix siz346dt.pdf Description: MOSFET 2N-CH 30V 17A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH