SIZ704DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 20W, 30W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
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Technische Details SIZ704DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR, Supplier Device Package: 6-PowerPair™, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 12A, 16A, Drain to Source Voltage (Vdss): 30V, Power - Max: 20W, 30W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 6-PowerPair™, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIZ704DT-T1-GE3 nach Preis ab 0.8 EUR bis 2.6 EUR
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SIZ704DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 30W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PowerPair™ |
auf Bestellung 6067 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZ704DT-T1-GE3 | VISHAY |
QFN |
auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIZ704DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 6067 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 11+ | 1.66 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| SIZ704DT-T1-GE3 |
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Hersteller: VISHAY
QFN
QFN
auf Bestellung 90 Stücke:
Lieferzeit 21-28 Tag (e)