SIZ704DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.70 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ704DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 6-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W, 30W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A, 16A, Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-PowerPair™.
Weitere Produktangebote SIZ704DT-T1-GE3 nach Preis ab 0.80 EUR bis 2.60 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIZ704DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 30W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PowerPair™ |
auf Bestellung 6067 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| SIZ704DT-T1-GE3 | Hersteller : VISHAY |
QFN |
auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
| SIZ704DT-T1-GE3 | Hersteller : VISHAY |
SIZ704DT-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
 |
SIZ704DT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V |
Produkt ist nicht verfügbar |