SIZ710DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™
| Anzahl | Preis |
|---|---|
| 3000+ | 0.97 EUR |
| 6000+ | 0.93 EUR |
| 9000+ | 0.88 EUR |
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Technische Details SIZ710DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 6-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W, 48W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 16A, 35A, Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V, Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-PowerPair™.
Weitere Produktangebote SIZ710DT-T1-GE3 nach Preis ab 0.92 EUR bis 2.34 EUR
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SIZ710DT-T1-GE3 | Vishay Semiconductors |
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 |
auf Bestellung 3609 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ710DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR Supplier Device Package: 6-PowerPair™ Vgs(th) (Max) @ Id: 2.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Drain to Source Voltage (Vdss): 20V Power - Max: 27W, 48W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Packaging: Cut Tape (CT) |
auf Bestellung 19342 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZ710DT-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
auf Bestellung 3609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.6 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 0.99 EUR |
| 3000+ | 0.95 EUR |
| 6000+ | 0.92 EUR |
| SIZ710DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Cut Tape (CT)
auf Bestellung 19342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.03 EUR |