SIZ902DT-T1-GE3 Vishay Semiconductors
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |
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Technische Details SIZ902DT-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 29W, 66W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16A, Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5).
Weitere Produktangebote SIZ902DT-T1-GE3 nach Preis ab 1.04 EUR bis 3.29 EUR
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SIZ902DT-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 16A 8POWERPAIRPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
auf Bestellung 1972 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZ902DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Case: PowerPAIR® 3x3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Gate charge: 21/65nC On-state resistance: 14.5/8.3mΩ Power dissipation: 29/66W Drain current: 16A Pulsed drain current: 50...80A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIZ902DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R |
Produkt ist nicht verfügbar |
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SIZ902DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
Produkt ist nicht verfügbar |
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| SIZ902DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Case: PowerPAIR® 3x3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Gate charge: 21/65nC On-state resistance: 14.5/8.3mΩ Power dissipation: 29/66W Drain current: 16A Pulsed drain current: 50...80A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement |
Produkt ist nicht verfügbar |