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SIZ926DT-T1-GE3

SIZ926DT-T1-GE3 Vishay Semiconductors

siz926dt.pdf Hersteller: Vishay Semiconductors
MOSFETs 25V Vds 16V Vgs PowerPAIR 6 x 5
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
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2+2.45 EUR
10+1.65 EUR
100+1.16 EUR
500+1.04 EUR
1000+0.89 EUR
3000+0.88 EUR
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Technische Details SIZ926DT-T1-GE3 Vishay Semiconductors

Description: MOSFET 2N-CH 25V 40A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.2W, 40W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.

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SIZ926DT-T1-GE3 SIZ926DT-T1-GE3 Hersteller : Vishay Siliconix siz926dt.pdf Description: MOSFET 2N-CH 25V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.96 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SIZ926DT-T1-GE3 SIZ926DT-T1-GE3 Hersteller : Vishay siz926dt.pdf Trans MOSFET N-CH 25V 22A/37A 8-Pin PowerPAIR EP T/R
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SIZ926DT-T1-GE3 Hersteller : VISHAY siz926dt.pdf SIZ926DT-T1-GE3 SMD N channel transistors
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SIZ926DT-T1-GE3 SIZ926DT-T1-GE3 Hersteller : Vishay Siliconix siz926dt.pdf Description: MOSFET 2N-CH 25V 40A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH