SIZ926DT-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.16 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.89 EUR |
| 3000+ | 0.88 EUR |
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Technische Details SIZ926DT-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 25V 40A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.2W, 40W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Weitere Produktangebote SIZ926DT-T1-GE3 nach Preis ab 0.96 EUR bis 3.08 EUR
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SIZ926DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 25V 40A 8POWERPAIRPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZ926DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 25V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 1.96 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.96 EUR |