Weitere Produktangebote SIZ980BDT-T1-GE3 nach Preis ab 1.12 EUR bis 4.55 EUR
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SIZ980BDT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIRPart Status: Active Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980BDT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Part Status: Active |
auf Bestellung 13593 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980BDT-T1-GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5 |
auf Bestellung 13649 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980BDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: No Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C SVHC: Lead (07-Nov-2024) |
auf Bestellung 11794 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIZ980BDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 197A Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: No Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C SVHC: Lead (07-Nov-2024) |
auf Bestellung 11794 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIZ980BDT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.12 EUR |
| SIZ980BDT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Part Status: Active
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Part Status: Active
auf Bestellung 13593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.2 EUR |
| SIZ980BDT-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5
MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5
auf Bestellung 13649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.55 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.57 EUR |
| SIZ980BDT-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: No
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
SVHC: Lead (07-Nov-2024)
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: No
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
SVHC: Lead (07-Nov-2024)
auf Bestellung 11794 Stücke:
Lieferzeit 14-21 Tag (e)
| SIZ980BDT-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 197A
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: No
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
SVHC: Lead (07-Nov-2024)
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 197A
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: No
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
SVHC: Lead (07-Nov-2024)
auf Bestellung 11794 Stücke:
Lieferzeit 14-21 Tag (e)