SIZ980DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 20A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.99 EUR |
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Technische Details SIZ980DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 20A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W, 66W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V, Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Weitere Produktangebote SIZ980DT-T1-GE3 nach Preis ab 1.06 EUR bis 3.52 EUR
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SIZ980DT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 20A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
auf Bestellung 7147 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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SIZ980DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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| SIZ980DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20/66W On-state resistance: 10/2.2mΩ Mounting: SMD Gate charge: 18/77nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIZ980DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20/66W On-state resistance: 10/2.2mΩ Mounting: SMD Gate charge: 18/77nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |