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SIZ980DT-T1-GE3

SIZ980DT-T1-GE3 Vishay Siliconix


siz980dt.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 20A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.99 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIZ980DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 20A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W, 66W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V, Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.

Weitere Produktangebote SIZ980DT-T1-GE3 nach Preis ab 1.06 EUR bis 3.52 EUR

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SIZ980DT-T1-GE3 SIZ980DT-T1-GE3 Hersteller : Vishay Semiconductors siz980dt.pdf MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.19 EUR
10+2.22 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.17 EUR
3000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIZ980DT-T1-GE3 SIZ980DT-T1-GE3 Hersteller : Vishay Siliconix siz980dt.pdf Description: MOSFET 2N-CH 30V 20A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 7147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.25 EUR
100+1.53 EUR
500+1.22 EUR
1000+1.12 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIZ980DT-T1-GE3 SIZ980DT-T1-GE3 Hersteller : Vishay siz980dt.pdf Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R
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SIZ980DT-T1-GE3 SIZ980DT-T1-GE3 Hersteller : Vishay siz980dt.pdf Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R
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SIZ980DT-T1-GE3 Hersteller : VISHAY siz980dt.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20/60A
Pulsed drain current: 90...130A
Power dissipation: 20/66W
On-state resistance: 10/2.2mΩ
Mounting: SMD
Gate charge: 18/77nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIZ980DT-T1-GE3 Hersteller : VISHAY siz980dt.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20/60A
Pulsed drain current: 90...130A
Power dissipation: 20/66W
On-state resistance: 10/2.2mΩ
Mounting: SMD
Gate charge: 18/77nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH