SIZF300DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.86 EUR |
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Technische Details SIZF300DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 23A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Weitere Produktangebote SIZF300DT-T1-GE3 nach Preis ab 1.23 EUR bis 2.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SIZF300DT-T1-GE3 | Vishay Semiconductors |
MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3 |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| SIZF300DT-T1-GE3 | Vishay |
Transistor N-Channel MOSFET; 30V; 75A; 4,5mOhm; 20V; 75W; -55°C ~ 150°C; SIZF300DT-T1-GE3 SIZF300DT TSIZF300dt Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
| SIZF300DT-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3
MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.23 EUR |
| SIZF300DT-T1-GE3 |
|
Hersteller: Vishay
Transistor N-Channel MOSFET; 30V; 75A; 4,5mOhm; 20V; 75W; -55°C ~ 150°C; SIZF300DT-T1-GE3 SIZF300DT TSIZF300dt
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 30V; 75A; 4,5mOhm; 20V; 75W; -55°C ~ 150°C; SIZF300DT-T1-GE3 SIZF300DT TSIZF300dt
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.03 EUR |