SIZF5300DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZF5300DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 35A PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 12-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.5W (Ta), 56.8W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V, Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAIR® 3x3FS, Part Status: Active.
Weitere Produktangebote SIZF5300DT-T1-GE3 nach Preis ab 1.55 EUR bis 3.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIZF5300DT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 30 V MOSFET PWRPAK |
auf Bestellung 9836 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SIZF5300DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 35A PWRPAIR Packaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active |
auf Bestellung 5314 Stücke: Lieferzeit 10-14 Tag (e) |
|