SIZF5302DT-T1-RE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 4.03 EUR |
| 10+ | 2.6 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.44 EUR |
| 3000+ | 1.37 EUR |
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Technische Details SIZF5302DT-T1-RE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 12-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.8W (Ta), 48.1W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAIR® 3x3FS, Part Status: Active.
Weitere Produktangebote SIZF5302DT-T1-RE3 nach Preis ab 1.42 EUR bis 4.26 EUR
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SIZF5302DT-T1-RE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 28.1A PWRPAIRPackaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 48.1W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active |
auf Bestellung 2351 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZF5302DT-T1-RE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
auf Bestellung 2351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 10+ | 2.75 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.42 EUR |