SIZF680LDT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: SYMMETRIC DUAL N-CH 80-V (D-S) M
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta), 62.5W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), 72A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAIR® 6 x 5FS
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Technische Details SIZF680LDT-T1-GE3 Vishay Siliconix
Description: SYMMETRIC DUAL N-CH 80-V (D-S) M, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.2W (Ta), 62.5W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), 72A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 40V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAIR® 6 x 5FS.