auf Bestellung 5805 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 1.03 EUR |
| 155+ | 0.98 EUR |
| 157+ | 0.93 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.78 EUR |
| 3000+ | 0.73 EUR |
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Produktbewertung abgeben
Technische Details SIZF906ADT-T1-GE3 Vishay
Description: MOSFET 2N-CH 30V 27A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5).
Weitere Produktangebote SIZF906ADT-T1-GE3 nach Preis ab 0.73 EUR bis 2.68 EUR
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SIZF906ADT-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R |
auf Bestellung 5805 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF906ADT-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F |
auf Bestellung 5804 Stücke: Lieferzeit 14-28 Tag (e) |
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SIZF906ADT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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| SIZF906ADT-T1-GE3 | Hersteller : VISHAY |
SIZF906ADT-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SIZF906ADT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 27A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
Produkt ist nicht verfügbar |
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SIZF906ADT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 27A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
Produkt ist nicht verfügbar |