| Anzahl | Preis |
|---|---|
| 1+ | 3.77 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.46 EUR |
| 3000+ | 1.34 EUR |
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Technische Details SIZF906BDT-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR, Supplier Device Package: 8-PowerPair® (6x5), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Schottky, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIZF906BDT-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SIZF906BDT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 36A 8POWERPAIRSupplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SIZF906BDT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIZF906BDT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIZF906BDT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH