Weitere Produktangebote SIZF906DT-T1-GE3 nach Preis ab 0.97 EUR bis 2.62 EUR
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SiZF906DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 60A 8POWERPAIRPart Status: Active Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 38W (Tc), 83W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TA) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SiZF906DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 60A 8POWERPAIR Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 38W (Tc), 83W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TA) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active |
auf Bestellung 16133 Stücke: Lieferzeit 10-14 Tag (e) |
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SiZF906DT-T1-GE3 | Vishay / Siliconix |
MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 |
auf Bestellung 8964 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiZF906DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 38W (Tc), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 38W (Tc), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.07 EUR |
| 6000+ | 1.02 EUR |
| 9000+ | 0.97 EUR |
| SiZF906DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 38W (Tc), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 38W (Tc), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 16133 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.14 EUR |
| SiZF906DT-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5
MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5
auf Bestellung 8964 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 2.16 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.37 EUR |