
SiZF906DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W (Tc), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 1.07 EUR |
6000+ | 1.02 EUR |
9000+ | 0.97 EUR |
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Technische Details SiZF906DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TA), Technology: MOSFET (Metal Oxide), Power - Max: 38W (Tc), 83W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Weitere Produktangebote SiZF906DT-T1-GE3 nach Preis ab 1.14 EUR bis 2.62 EUR
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SiZF906DT-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) Power - Max: 38W (Tc), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
auf Bestellung 16133 Stücke: Lieferzeit 10-14 Tag (e) |
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SiZF906DT-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 8964 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF906DT-T1-GE3 Produktcode: 186042
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SIZF906DT-T1-GE3 | Hersteller : Vishay |
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SIZF906DT-T1-GE3 | Hersteller : Vishay |
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SiZF906DT-T1-GE3 | Hersteller : VISHAY |
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