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SIZF916DT-T1-GE3

SIZF916DT-T1-GE3 Vishay Semiconductors

sizf916dt.pdf Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
10+1.80 EUR
100+1.51 EUR
500+1.33 EUR
1000+1.13 EUR
3000+1.04 EUR
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Technische Details SIZF916DT-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH DUAL 30V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V, Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.

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SIZF916DT-T1-GE3 SIZF916DT-T1-GE3 Hersteller : Vishay Siliconix sizf916dt.pdf Description: MOSFET N-CH DUAL 30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+2.58 EUR
100+2.01 EUR
500+1.66 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIZF916DT-T1-GE3 Hersteller : VISHAY sizf916dt.pdf SIZF916DT-T1-GE3 Multi channel transistors
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SIZF916DT-T1-GE3 SIZF916DT-T1-GE3 Hersteller : Vishay Siliconix sizf916dt.pdf Description: MOSFET N-CH DUAL 30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH