SIZF916DT-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH DUAL 30V, Part Status: Active, Supplier Device Package: 8-PowerPair® (6x5), Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V, Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).