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SIZF920DT-T1-GE3

SIZF920DT-T1-GE3 Vishay / Siliconix

sizf920dt.pdf Hersteller: Vishay / Siliconix
MOSFETs Dual 30V Vds PowerPAIR 6x5F
auf Bestellung 11012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.46 EUR
10+2.15 EUR
100+1.80 EUR
250+1.74 EUR
500+1.58 EUR
1000+1.42 EUR
3000+1.35 EUR
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Technische Details SIZF920DT-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 28A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V, Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.

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SIZF920DT-T1-GE3 SIZF920DT-T1-GE3 Hersteller : Vishay Siliconix sizf920dt.pdf Description: MOSFET 2N-CH 30V 28A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 2211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+2.86 EUR
100+1.96 EUR
500+1.58 EUR
1000+1.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIZF920DT-T1-GE3 SIZF920DT-T1-GE3 Hersteller : Vishay sizf920dt.pdf Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R
Produkt ist nicht verfügbar
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SIZF920DT-T1-GE3 SIZF920DT-T1-GE3 Hersteller : Vishay Siliconix sizf920dt.pdf Description: MOSFET 2N-CH 30V 28A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH