SIZF920DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET DL N-CH 30V POWERPAIR 6X5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 2211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 3 EUR |
| 100+ | 2.41 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.64 EUR |
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Technische Details SIZF920DT-T1-GE3 Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR 6X5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V, Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Weitere Produktangebote SIZF920DT-T1-GE3 nach Preis ab 3.74 EUR bis 5.15 EUR
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SIZF920DT-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET Dual 30V Vds PowerPAIR 6x5F |
auf Bestellung 11386 Stücke: Lieferzeit 14-28 Tag (e) |
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SIZF920DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R |
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SIZF920DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET DL N-CH 30V POWERPAIR 6X5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
Produkt ist nicht verfügbar |