SIZF920DT-T1-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.8 EUR |
| 250+ | 1.74 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.42 EUR |
| 3000+ | 1.35 EUR |
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Technische Details SIZF920DT-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 28A 8POWERPAIR, Part Status: Active, Supplier Device Package: 8-PowerPair® (6x5), Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V, Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Schottky, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIZF920DT-T1-GE3 nach Preis ab 1.45 EUR bis 4.44 EUR
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SIZF920DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 28A 8POWERPAIRPart Status: Active Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 2211 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZF920DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 28A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.44 EUR |
| 10+ | 2.86 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.45 EUR |