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SK 100 GD 066 T 24912430 SEMIKRON DANFOSS


SK100GD066T.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of module: IGBT
Case: SEMITOP4
Anzahl je Verpackung: 1 Stücke
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Technische Details SK 100 GD 066 T 24912430 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Topology: IGBT three-phase bridge; thermistor, Type of module: IGBT, Case: SEMITOP4, Anzahl je Verpackung: 1 Stücke.

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SK 100 GD 066 T 24912430 Hersteller : SEMIKRON DANFOSS SK100GD066T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of module: IGBT
Case: SEMITOP4
Produkt ist nicht verfügbar