Produkte > SEMIKRON DANFOSS > SK 30 GD 066 ET 24914960

SK 30 GD 066 ET 24914960 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CB3C105D039C0D6&compId=SK30GD066ET.pdf?ci_sign=fdb8eca9f936054a691987e5fdb3d6e0d9556f77 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 30A; SEMITOP3
Electrical mounting: Press-in PCB
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge OE output; thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Case: SEMITOP3
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Technische Details SK 30 GD 066 ET 24914960 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 30A; SEMITOP3, Electrical mounting: Press-in PCB, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge OE output; thermistor, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 30A, Pulsed collector current: 60A, Max. off-state voltage: 0.6kV, Case: SEMITOP3.