Produkte > SEMIKRON DANFOSS > SK 35 GAL 12T4 24915850
SK 35 GAL 12T4 24915850

SK 35 GAL 12T4 24915850 SEMIKRON DANFOSS

SK35GAL12T4.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; T2
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: SEMITOP2
Version: T2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper
Pulsed collector current: 105A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 35A
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Technische Details SK 35 GAL 12T4 24915850 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; T2, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Max. off-state voltage: 1.2kV, Case: SEMITOP2, Version: T2, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Topology: boost chopper, Pulsed collector current: 105A, Application: for UPS; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Collector current: 35A.