Produkte > SEMIKRON DANFOSS > SK 35 GB 12T4 24914900

SK 35 GB 12T4 24914900 SEMIKRON DANFOSS

SK35GB12T4.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A
Case: SEMITOP2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 105A
Topology: IGBT half-bridge
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
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Technische Details SK 35 GB 12T4 24914900 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A, Case: SEMITOP2, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 35A, Pulsed collector current: 105A, Topology: IGBT half-bridge, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB.