Produkte > SEMIKRON DANFOSS > SK 35 GD 12T4 ETE1 24921450
SK 35 GD 12T4 ETE1 24921450
SK 35 GD 12T4 ETE1 24921450
SK 35 GD 12T4 ETE1 24921450SK 35 GD 12T4 ETE1 24921450

SK 35 GD 12T4 ETE1 24921450 SEMIKRON DANFOSS

SK35GD12T4ETE1.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw
Case: SEMITOPE1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Pulsed collector current: 105A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: IGBT three-phase bridge OE output; thermistor
Type of semiconductor module: IGBT
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Technische Details SK 35 GD 12T4 ETE1 24921450 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 35A; screw, Case: SEMITOPE1, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Pulsed collector current: 105A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Collector current: 35A, Topology: IGBT three-phase bridge OE output; thermistor, Type of semiconductor module: IGBT.