SKB06N60ATMA1

SKB06N60ATMA1 Infineon Technologies


630skb06n60_rev2_3g.pdffolderiddb3a304412b407950112b408e8c90004filei.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 12A 68000mW 3-Pin(2+Tab) D2PAK T/R
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Technische Details SKB06N60ATMA1 Infineon Technologies

Description: IGBT 600V 12A 68W TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/220ns, Switching Energy: 215µJ, Test Condition: 400V, 6A, 50Ohm, 15V, Gate Charge: 32 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 68 W.

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SKB06N60ATMA1 SKB06N60ATMA1 Hersteller : Infineon Technologies SKB06N60.pdf Description: IGBT 600V 12A 68W TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/220ns
Switching Energy: 215µJ
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 68 W
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