Produkte > SEMIKRON DANFOSS > SKIIP 02NEC066V3 25232310

SKIIP 02NEC066V3 25232310 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F90FE1E8F400C4&compId=SKIIP02NEC066V3.pdf?ci_sign=00ef885c57bf716fc41ae60dbb142e6baa910fad pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 10A
Power: 2.2kW
Case: MiniSKiiP® 0
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 02NEC066V3 25232310 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Max. off-state voltage: 0.6kV, Collector current: 10A, Power: 2.2kW, Case: MiniSKiiP® 0, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 20A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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SKIIP 02NEC066V3 25232310 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95F90FE1E8F400C4&compId=SKIIP02NEC066V3.pdf?ci_sign=00ef885c57bf716fc41ae60dbb142e6baa910fad pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 10A
Power: 2.2kW
Case: MiniSKiiP® 0
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH