SKIIP 11NAB066V1 25230580 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 6A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mechanical mounting: screw
Power: 1.5kW
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 11NAB066V1 25230580 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 0.6kV, Collector current: 6A, Case: MiniSKiiP® 1, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 12A, Mechanical mounting: screw, Power: 1.5kW, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SKIIP 11NAB066V1 25230580 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 6A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 6A Case: MiniSKiiP® 1 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Pulsed collector current: 12A Mechanical mounting: screw Power: 1.5kW |
Produkt ist nicht verfügbar |