
SKIIP 12NAB12T4V1 25231440 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Power: 5.5kW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 42.94 EUR |
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Technische Details SKIIP 12NAB12T4V1 25231440 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw, Max. off-state voltage: 1.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 15A, Pulsed collector current: 45A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Power: 5.5kW, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKIIP 12NAB12T4V1 25231440 nach Preis ab 42.94 EUR bis 42.94 EUR
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SKIIP 12NAB12T4V1 25231440 | Hersteller : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw Max. off-state voltage: 1.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 45A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: MiniSKiiP® 1 Power: 5.5kW |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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