Produkte > SEMIKRON DANFOSS > SKIIP 12NAB12T4V1 25231440
SKIIP 12NAB12T4V1 25231440

SKIIP 12NAB12T4V1 25231440 SEMIKRON DANFOSS

SKiiP12NAB12T4V1.pdf SEMIKRON_Product_Variants.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Power: 5.5kW
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 45A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.6kV
Electrical mounting: Press-Fit
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Collector current: 15A
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Technische Details SKIIP 12NAB12T4V1 25231440 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw, Power: 5.5kW, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 45A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.6kV, Electrical mounting: Press-Fit, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Collector current: 15A.