Produkte > SEMIKRON DANFOSS > SKIIP 13NAB066V1 25230600

SKIIP 13NAB066V1 25230600 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CAF3DF5742060D6&compId=SKIIP13NAB066V1.pdf?ci_sign=922e826178812306218c71c4d8a818f4ff6b8621 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 15A
Collector current: 15A
Pulsed collector current: 30A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Power: 3kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 13NAB066V1 25230600 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 15A, Collector current: 15A, Pulsed collector current: 30A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Power: 3kW, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

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SKIIP 13NAB066V1 25230600 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CAF3DF5742060D6&compId=SKIIP13NAB066V1.pdf?ci_sign=922e826178812306218c71c4d8a818f4ff6b8621 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 15A
Collector current: 15A
Pulsed collector current: 30A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Power: 3kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH