SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A
Case: MiniSKiiP® 1
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Gate-emitter voltage: ±20V
Collector current: 43A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A, Case: MiniSKiiP® 1, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Type of semiconductor module: IGBT, Max. off-state voltage: 0.6kV, Gate-emitter voltage: ±20V, Collector current: 43A, Pulsed collector current: 60A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKIIP 13NEB066V1 25231430
Foto | Bezeichnung | Hersteller | Beschreibung |
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SKIIP 13NEB066V1 25231430 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A Case: MiniSKiiP® 1 Semiconductor structure: diode/transistor Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge Type of semiconductor module: IGBT Max. off-state voltage: 0.6kV Gate-emitter voltage: ±20V Collector current: 43A Pulsed collector current: 60A |
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