Produkte > SEMIKRON DANFOSS > SKIIP 13NEB066V1 25231430

SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS

SEMIKRON_Product_Variants.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A
Mechanical mounting: screw
Electrical mounting: Press-Fit
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Collector current: 43A
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Application: for UPS; Inverter; photovoltaics
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Technische Details SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A, Mechanical mounting: screw, Electrical mounting: Press-Fit, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Collector current: 43A, Pulsed collector current: 60A, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Application: for UPS; Inverter; photovoltaics.