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SKIIP 14NAB066V1 25230610 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FB618D0F8D60C4&compId=SKIIP14NAB066V1.pdf?ci_sign=d09ae38c326f1dde0cefd1bf9f6aac5608769b28

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A
Mechanical mounting: screw
Electrical mounting: Press-Fit
Collector current: 20A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Power: 4kW
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: MiniSKiiP® 1
Anzahl je Verpackung: 1 Stücke

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Technische Details SKIIP 14NAB066V1 25230610 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A, Mechanical mounting: screw, Electrical mounting: Press-Fit, Collector current: 20A, Pulsed collector current: 40A, Gate-emitter voltage: ±20V, Max. off-state voltage: 0.6kV, Power: 4kW, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: MiniSKiiP® 1, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKIIP 14NAB066V1 25230610

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	SKIIP 14NAB066V1 25230610	Hersteller : SEMIKRON DANFOSS	Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A Mechanical mounting: screw Electrical mounting: Press-Fit Collector current: 20A Pulsed collector current: 40A Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Power: 4kW Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Case: MiniSKiiP® 1	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH