Produkte > SEMIKRON DANFOSS > SKIIP 23NAB12T7V1 25231860

SKIIP 23NAB12T7V1 25231860 SEMIKRON DANFOSS

SKIIP23NAB12T7V1.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: MiniSKiiP® 2
Type of semiconductor module: IGBT
Pulsed collector current: 50A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
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Technische Details SKIIP 23NAB12T7V1 25231860 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Electrical mounting: Press-Fit, Mechanical mounting: screw, Case: MiniSKiiP® 2, Type of semiconductor module: IGBT, Pulsed collector current: 50A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 25A, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge.