Produkte > SEMIKRON DANFOSS > SKIIP 26GAL12T4V1 25241235

SKIIP 26GAL12T4V1 25241235 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE312DF0EE7A0D6&compId=SKIIP26GAL12T4V1.pdf?ci_sign=8d72572351217df20ecfd262e3c697d8bc9e5387 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: MiniSKiiP® 2
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
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Technische Details SKIIP 26GAL12T4V1 25241235 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: MiniSKiiP® 2, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Mechanical mounting: screw.