Produkte > SEMIKRON DANFOSS > SKIIP 26GB12T7V1 25241216

SKIIP 26GB12T7V1 25241216 SEMIKRON DANFOSS


SKIIP26GB12T7V1.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: Press-Fit
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Case: MiniSKiiP® 2
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
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Technische Details SKIIP 26GB12T7V1 25241216 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Electrical mounting: Press-Fit, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; NTC thermistor, Case: MiniSKiiP® 2, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Max. off-state voltage: 1.2kV, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics.