SKIIP 35NAB12T4V1 25231470 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Application: frequency changer; Inverter
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: MiniSKiiP® 3
Power: 15kW
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 35NAB12T4V1 25231470 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 150A, Application: frequency changer; Inverter, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Case: MiniSKiiP® 3, Power: 15kW, Anzahl je Verpackung: 1 Stücke.
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SKIIP 35NAB12T4V1 25231470 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 150A Application: frequency changer; Inverter Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: MiniSKiiP® 3 Power: 15kW |
Produkt ist nicht verfügbar |