SKIIP 36NAB126V10 25230990 SEMIKRON DANFOSS


Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Electrical mounting: Press-Fit
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 140A
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 36NAB126V10 25230990 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Electrical mounting: Press-Fit, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 3, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 80A, Pulsed collector current: 140A, Anzahl je Verpackung: 1 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SKIIP 36NAB126V10 25230990 | Hersteller : SEMIKRON DANFOSS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Electrical mounting: Press-Fit Application: for UPS; Inverter; photovoltaics Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: MiniSKiiP® 3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 140A |
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