Produkte > SEMIKRON DANFOSS > SKIIP 38NAB066V1 25230650

SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a pVersion=0046&contRep=ZT&docId=005056AB90B41EDA96A5F228028600C4&compId=SKIIP38NAB066V1.pdf?ci_sign=e82507fe1f1e08e5bfd0a8b59029c30648779199 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW
Collector current: 100A
Pulsed collector current: 200A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 3
Power: 11kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SKIIP 38NAB066V1 25230650 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW, Collector current: 100A, Pulsed collector current: 200A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Case: MiniSKiiP® 3, Power: 11kW, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKIIP 38NAB066V1 25230650

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SKIIP 38NAB066V1 25230650 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a pVersion=0046&contRep=ZT&docId=005056AB90B41EDA96A5F228028600C4&compId=SKIIP38NAB066V1.pdf?ci_sign=e82507fe1f1e08e5bfd0a8b59029c30648779199 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; P: 11kW
Collector current: 100A
Pulsed collector current: 200A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: MiniSKiiP® 3
Power: 11kW
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH