SKIIP 39TMLI12T4V2 25232780 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Case: MiniSKiiP® 3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: 3-level inverter TNPC; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 290A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Case: MiniSKiiP® 3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: 3-level inverter TNPC; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 290A
Pulsed collector current: 600A
Anzahl je Verpackung: 1 Stücke
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Technische Details SKIIP 39TMLI12T4V2 25232780 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC, Case: MiniSKiiP® 3, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: 3-level inverter TNPC; NTC thermistor, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 290A, Pulsed collector current: 600A, Anzahl je Verpackung: 1 Stücke.
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SKIIP 39TMLI12T4V2 25232780 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC Case: MiniSKiiP® 3 Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: 3-level inverter TNPC; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 290A Pulsed collector current: 600A |
Produkt ist nicht verfügbar |