Produkte > SEMIKRON DANFOSS > SKIM304GD12T4D 23916500

SKIM304GD12T4D 23916500 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CB09D77B40020D6&compId=SKIM304GD12T4D.pdf?ci_sign=5a2320ef7f1027d5fb0764fec142a8acf5ab50a7 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SKiM4
Application: for UPS; Inverter; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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Technische Details SKIM304GD12T4D 23916500 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SKiM4, Application: for UPS; Inverter; photovoltaics, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw.