Produkte > SEMIKRON DANFOSS > SKM150GAL12F4G 22896150

SKM150GAL12F4G 22896150 SEMIKRON DANFOSS

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Case: SEMITRANS3
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV

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Technische Details SKM150GAL12F4G 22896150 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Topology: boost chopper, Electrical mounting: FASTON connectors; screw, Case: SEMITRANS3, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV.