SKM150GAL12V 22892301 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: boost chopper
Type of semiconductor module: IGBT
Case: SEMITRANS2
Anzahl je Verpackung: 1 Stücke
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Technische Details SKM150GAL12V 22892301 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 450A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: boost chopper, Type of semiconductor module: IGBT, Case: SEMITRANS2, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKM150GAL12V 22892301
Foto | Bezeichnung | Hersteller | Beschreibung |
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SKM150GAL12V 22892301 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 450A Application: for UPS; Inverter; photovoltaics Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: boost chopper Type of semiconductor module: IGBT Case: SEMITRANS2 |
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