Produkte > SEMIKRON DANFOSS > SKM150GB12F4G 22896060

SKM150GB12F4G 22896060 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE8EE07157C40D6&compId=SKM150GB12F4G.pdf?ci_sign=72411292e200938bb8cccf5caf4a9142075d0432 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Electrical mounting: FASTON connectors; screw
Case: SEMITRANS3
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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Technische Details SKM150GB12F4G 22896060 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Topology: IGBT half-bridge, Electrical mounting: FASTON connectors; screw, Case: SEMITRANS3, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV.