SKM150GB17E4G 22895052 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: SEMITRANS3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SKM150GB17E4G 22895052 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.7kV, Collector current: 150A, Case: SEMITRANS3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SKM150GB17E4G 22895052 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 150A Case: SEMITRANS3 Application: for UPS; Inverter; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
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