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SKM200GAL12E4 22892304 SEMIKRON DANFOSS


SKM200GAL12E4.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Case: SEMITRANS3
Anzahl je Verpackung: 1 Stücke
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Technische Details SKM200GAL12E4 22892304 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper, Case: SEMITRANS3, Anzahl je Verpackung: 1 Stücke.

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SKM200GAL12E4 22892304 Hersteller : SEMIKRON DANFOSS SKM200GAL12E4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Case: SEMITRANS3
Produkt ist nicht verfügbar