Produkte > SEMIKRON DANFOSS > SKM200GAL12VL2 22895560

SKM200GAL12VL2 22895560 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE3733BA0BE40D6&compId=SKM200GAL12VL2.pdf?ci_sign=1e73bc407bc036c87138f5ca429aaf13677c4144 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter; photovoltaics
Case: SEMITRANS2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Topology: boost chopper
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Technische Details SKM200GAL12VL2 22895560 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Semiconductor structure: diode/transistor, Electrical mounting: FASTON connectors; screw, Application: for UPS; Inverter; photovoltaics, Case: SEMITRANS2, Type of semiconductor module: IGBT, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Topology: boost chopper.