
SKM200GAL17E4 22895110 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 248A
Case: SEMITRANS3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1170A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SKM200GAL17E4 22895110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.7kV, Collector current: 248A, Case: SEMITRANS3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1170A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
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SKM200GAL17E4 22895110 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.7kV Collector current: 248A Case: SEMITRANS3 Application: for UPS; Inverter; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 1170A Mechanical mounting: screw |
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