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SKM200GBD126D 22891102 SEMIKRON DANFOSS

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 186A; SEMITRANS3
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge + serial diodes
Max. off-state voltage: 1.2kV
Collector current: 186A
Case: SEMITRANS3
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 414A
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics

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Technische Details SKM200GBD126D 22891102 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 186A; SEMITRANS3, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: IGBT half-bridge + serial diodes, Max. off-state voltage: 1.2kV, Collector current: 186A, Case: SEMITRANS3, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 414A, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics.