Produkte > SEMIKRON DANFOSS > SKM25GAH125D 21917990

SKM25GAH125D 21917990 SEMIKRON DANFOSS

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Topology: H-bridge
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Case: SEMITRANS6
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV

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Technische Details SKM25GAH125D 21917990 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A, Type of semiconductor module: IGBT, Topology: H-bridge, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors, Mechanical mounting: screw, Case: SEMITRANS6, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 25A, Pulsed collector current: 50A, Max. off-state voltage: 1.2kV.