Produkte > SEMIKRON DANFOSS > SKM25GAH125D 21917990

SKM25GAH125D 21917990 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE7DA3B4A7D80D6&compId=SKM25GAH125D.pdf?ci_sign=1e4cbdb05e6597c43a9a06e9ccea0b585a696a07 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: SEMITRANS6
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SKM25GAH125D 21917990 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 25A, Case: SEMITRANS6, Application: for UPS; Inverter; photovoltaics, Electrical mounting: FASTON connectors, Gate-emitter voltage: ±20V, Pulsed collector current: 50A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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SKM25GAH125D 21917990 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9BE7DA3B4A7D80D6&compId=SKM25GAH125D.pdf?ci_sign=1e4cbdb05e6597c43a9a06e9ccea0b585a696a07 Category: IGBT modules
Description: Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: SEMITRANS6
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH