| Anzahl | Privatkunde |
|---|---|
| 1+ | 677.91 EUR |
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Technische Details SKM400GM17E4 Semikron
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Case: SEMITRANS3, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 1.2kA, Application: Inverter, Max. off-state voltage: 1.7kV, Electrical mounting: FASTON connectors; screw, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 400A, Topology: IGBT x2.
Weitere Produktangebote SKM400GM17E4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SKM400GM17E4 22895160 | SEMIKRON DANFOSS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SEMITRANS3 Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 1.2kA Application: Inverter Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 400A Topology: IGBT x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SKM400GM17E4 22895160 |
|
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SEMITRANS3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: IGBT x2
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Case: SEMITRANS3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: IGBT x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH