Produkte > SEMIKRON DANFOSS > SKM75GB12V 22892013
SKM75GB12V 22892013

SKM75GB12V 22892013 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CD001F2A3D4469&compId=SKM75GB12V.pdf?ci_sign=3f03daabfe7158d4d33084a77f037731f0184acd Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMITRANS2
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Version: D61
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+114.06 EUR
8+109.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SKM75GB12V 22892013 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A, Electrical mounting: FASTON connectors; screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Mechanical mounting: screw, Case: SEMITRANS2, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 225A, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Version: D61, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKM75GB12V 22892013 nach Preis ab 109.67 EUR bis 114.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SKM75GB12V 22892013 SKM75GB12V 22892013 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CD001F2A3D4469&compId=SKM75GB12V.pdf?ci_sign=3f03daabfe7158d4d33084a77f037731f0184acd Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMITRANS2
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Version: D61
Semiconductor structure: transistor/transistor
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+114.06 EUR
8+109.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH