SL2302B Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.Description: MOSFET N-CH 20V 2.8A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A
FET Feature: Logic Level Gate, 4V Drive
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 2837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 213+ | 0.083 EUR |
| 344+ | 0.051 EUR |
| 500+ | 0.037 EUR |
| 1000+ | 0.032 EUR |
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Technische Details SL2302B Shenzhen Slkormicro Semicon Co., Ltd.
Description: MOSFET N-CH 20V 2.8A, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A, FET Feature: Logic Level Gate, 4V Drive, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.
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SL2302B | Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. |
Description: MOSFET N-CH 20V 2.8A Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A FET Feature: Logic Level Gate, 4V Drive Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
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